A Scaling Theory for the Nonlinear Subthreshold Behavior of Cryogenic UTB MOSFETs
Published in IEEE Electron Device Letters (IEEE EDL), 2026
The subthreshold swing (SS) is expected to scale linearly with temperature, SSB = (kBT/q)ln10, yet experimental data from cryogenic UTB (Si, MoS2, and oxide) MOSFETs exhibit anomalous temperature-dependent nonlinearities characterized by negative differential SS and multiple plateaus. Here we use the Landauer formulation to rigorously derive the scaling relationship SS = SSB · [1 + γ(TR/T) T/TW ] to capture the universality and robustness of SS anomalies reported in the literature to date. The temperature scales (TW, TR) are related to the intrinsic properties of the band-tail states and reference current, and as such, can be used as a diagnostic quality monitor of as-fabricated and stress-degraded MOSFET.
In Huh et al., IEEE Electron Device Letters (IEEE EDL), 2026